Abstract
A silicon-on-insulator structure was formed by implanting 2×1018 oxygen ions cm−2 into crystalline silicon at 150 keV. A systematic investigation of the effect of annealing temperature was carried out by annealing for 6 h at temperatures of 1150, 1200, 1250, and 1295 °C. The microstructure and oxygen-concentration profile were investigated by using cross-sectional transmission-electron microscopy and Auger analysis. Changes were observed to occur throughout this annealing-temperature regime. After the highest annealing temperature, a single-crystal top silicon-layer of 150 nm with 4×109 dislocations cm−2 and no oxide precipitates was obtained. The 500 nm of buried oxide has very sharp interfaces, and contains crystalline-silicon inclusions near the interface with the substrate silicon.
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