High temperature AlN thin film ultrasonic transducers with dual mode wave excitation

Abstract

AlN thin film ultrasonic transducers with dual mode wave (transverse and longitudinal) excitation were deposited by reactive RF magnetron sputtering technique. The transducers deposited at radial distances of 0 and 50 mm in the sample plane exhibited well-developed straight and inclined columnar structures with dominating (002) and (103) X-ray diffraction peaks, respectively. The transducers deposited at radial distances of 0, 30, and 50 mm demonstrated excitation of longitudinal, transverse, and longitudinal-transverse waves, respectively. Short term heat treatment was conducted in air within a temperature range of 20–900 °C to investigate the high temperature ultrasonic response. Temperature dependencies of the time-of-flight and pulse-echo amplitude were analyzed. Long term heat treatment in air at 700 °C for 192 h revealed a degradation of ultrasonic response due to the oxidation of the AlN layer.