Abstract
High-temperature AlN intermediate layers with different thicknesses were deposited during the growth of wurtzite GaN on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy. When using a 3.5nm AlN intermediate layer temperature-dependent Van-der-Pauw Hall measurements revealed a mobility enhancement by a factor of 2.5 at room temperature and by a factor of 32 at 30K. Transmission electron microscopy confirmed that the better material quality was due to a reduction of dislocation density by about one order of magnitude. Photoluminescence measurements indicate a decrease of full-width at half-maximum of the main emission peak for GaN samples with AlN intermediate layer. Photoluminescence peak position and Raman shift of the E2 mode hint at increasing biaxial compressive strain with increasing AlN intermediate layer thickness.
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