Abstract

Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C. Each photodiode was then investigated as a high-temperature-tolerant photon counting X-ray detector by connecting it to a custom-made low-noise charge-sensitive preamplifier and illuminating it with an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). At 100 °C, the best energy resolutions (full width at half maximum at 5.9 keV) achieved using the 217 µm ± 15 µm diameter photodiode and the 409 µm ± 28 µm diameter photodiode were 1.31 keV ± 0.04 keV and 1.64 keV ± 0.08 keV, respectively. Noise analysis of the system is presented. The dielectric dissipation factor of Al0.52In0.48P was estimated as a function of temperature, up to 100 °C. The results show the performance of the thickest Al0.52In0.48P X-ray detectors so far reported at high temperature. The work has relevance for the development of novel space science instrumentation for use in hot space environments and extreme terrestrial applications.

Highlights

  • X-ray spectroscopy is a key technology for many space science applications, including in situ planetary and comet analysis[1,2], planetary remote sensing[3,4], and observation of solar activities[5,6]

  • The electrical characteristics and photon counting spectroscopic X-ray detection performance of Al0.52In0.48P p+-i-n+ mesa photodiodes with two different diameters (217 μm ± 15 μm and 409 μm ± 28 μm) were studied as a function of temperature, T (0 °C ≤ T ≤ 100 °C)

  • The photodiodes are the thickest (6 μm thick i layer) Al0.52In0.48P X-ray photodiodes ever characterised for their high temperature ( > 20 °C) performance

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Summary

Introduction

X-ray spectroscopy is a key technology for many space science applications, including in situ planetary and comet analysis[1,2], planetary remote sensing[3,4], and observation of solar activities[5,6]. Using a high-quality wide bandgap semiconductor photodiode detector and a low-noise charge-sensitive preamplifier[11,13,27], excellent energy resolutions can be achieved. Bertuccio et al have reported the best high temperature X-ray spectrometer energy resolution: 233 eV FWHM at 5.9 keV at 100 °C. This was achieved using a 4 H-SiC Schottky diode detector[11] and an ultra-low-noise charge-sensitive preamplifier. For Al0.52In0.48P, the best high temperature (100 °C) energy resolution so far reported is 1.57 keV FWHM at 5.9 keV27 This result was achieved using the first non-avalanche Al0.52In0.48P X-ray photodiode ever reported[27]. In the new work reported in the current article, two 6 μm i layer Al0.52In0.48P photodiodes are extensively characterised at temperatures from 0 °C to 100 °C as part of efforts to develop photon counting X-ray spectrometers for future space science missions

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