Abstract
Tunnel field effect transistor (TFET) technology is unique of the prominent devices in low power applications. The band-to-band tunnel switching mechanism is sets TFET apart from traditional MOSFET technology. It helps to reduce leakage currents. The major advantage is the Sub threshold slope smaller than 60mv/decade. Newer technologies are expected to change the gate, architectures, channel materials and transport mechanisms. In this point of view tunnel FET has to play the most imminent role in the least leakage current and also need to overcome limitations of drive current in TFET. The proposed model of hetero junction double gate TFET has attain superior ON state current, low off-state current and better steeper slope i.e., 4.94 x10-5A/µm, 32.3 x10-17A/µm 28.3mv/decade as compared with single gate hetero junction TFET and conventional device. This proposed design suitable for high switching speed and low power application.
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