Abstract
Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their impressive performance in photovoltaic devices. One-dimensional perovskite CH3NH3PbI3 nanomaterials, possessing unique structural features such as large surface-to-volume ratio, anisotropic geometry and quantum confinement, may have excellent optoelectronic properties, which could be utilized to fabricate high-performance photodetectors. However, in comparison to CH3NH3PbI3 thin films, reports on the fabrication of CH3NH3PbI3 nanowires for optoelectrical application are rather limited. Herein, a two-step spin-coating process has been utilized to fabricate pure-phase and single-crystalline CH3NH3PbI3 nanowires on a substrate without mesoporous TiO2 or Al2O3. The size and density of CH3NH3PbI3 nanowires can be easily controlled by changing the PbI2 precursor concentration. The as-prepared CH3NH3PbI3 nanowires are utilized to fabricate photodetectors, which exhibit a fairly high switching ratio of ~600, a responsivity of 55 mA/W, and a normalized detectivity of 0.5 × 1011 jones under 532 nm light illumination (40 mW/cm2) at a very low bias voltage of 0.1 V. The as-prepared perovskite CH3NH3PbI3 nanowires with excellent optoelectronic properties are regarded to be a potential candidate for high-performance photodetector application.
Highlights
Photodetectors, which convert incident light signals into electronic signals, are important devices for application in a wide range of civilian and military fields, including optical communications, environmental sensors, medical analysis, missile launch detection, and so forth [1,2,3]
In the past few decades, one-dimensional (1D) semiconductor nanomaterials have been considered the most promising candidates for achieving high-performance photodetectors with high switching ratio (SR), large responsivity (Rλ), fast response speed and excellent stability, which can be attributed to their large surface-to-volume ratio, anisotropic geometry and quantum confinement in two dimensions [13]
Developing a high-efficiency photodetector based on single-crystalline perovskite nanowires is of great significance
Summary
Photodetectors, which convert incident light signals into electronic signals, are important devices for application in a wide range of civilian and military fields, including optical communications, environmental sensors, medical analysis, missile launch detection, and so forth [1,2,3]. The crucial characteristics of high-performance photodetectors for practical application include wide spectral response, sensitivity, high switching ratio, fast response, large detectivity and easy fabrication. Many semiconductor nanomaterials, such as ZnO, Si, CdS, PbS, CdHgTe, have been applied in photodetectors that can detect the light ranged from UV to infrared region [4,5,6]. Some reports indicate that single-crystalline perovskite nanowires have very low defect levels and impressive optoelectrical properties [24,25,26], which are comparable or even better than their large single-crystal counterpart. Developing a high-efficiency photodetector based on single-crystalline perovskite nanowires is of great significance
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