Abstract
In this study, a novel high performance self-powered p-n heterojunction Ultraviolet (UV) photodetector (PD) based on Znic octaethylphorphyrin (ZnOEP)/porous-Gallium nitride (GaN) was fabricated. The porous structure of GaN has a significant effect on the performance of PD. Compared with flat-GaN, the porous GaN based PD exhibit much lower dark current (~34 pA) with a much higher switch ratio (Ip/Id) of 106, specific detectivity (D*) of 1.6 × 1012 Jones. The switch ratio reaches the highest among the reported GaN based PD. The high performance combined with self-powered capability of our PD has potential application in many areas.
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