Abstract
High structural and optical quality 1.3μm GaInNAs∕GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs∕GaAs (6nm∕20nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs∕GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.
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