High stress dislocation substructures of GaAs as a function of electronic doping

Abstract

Weak beam microscopy technique has been used to study high stress dislocation substructures in GaAs with different electronic doping (n, p, undoped types) in the primary glide plane and the cross slip plane. Dissociations of the α, β and screw segments were observed in the three sets of samples together with an asymmetric behaviour of dissociated screw dislocations in the cross slip plane. The observed fine structure of dislocations cannot explain differences in mobilities of the different segments as a function of doping. This confirms the hypothesis of electronic effects on dislocation mobilities at low temperature.