High step‐up three level boost converter with inverse characteristic

Abstract

This paper presents a novel magnetically coupled dual switches three level dc–dc converter with high-voltage boost and reduced power device voltage stress ability. The topology can achieve high-voltage boost ability by using coupled inductor and low MOSFET voltage stress by using three-level idea. However, unlike other high step-up three level converters, its gain is increased by reducing turns ratio. The name inverse is used for representing the inverse proportion principle of the proposed converter. Aiming at existing leakage inductance, introduced diode and capacitor circuit not only absorbs the leakage energy but also further boosts the gain. In addition, the proposed converter only utilises one magnetic core. Operating principles and relevant theoretical analysis of the proposed converter are described. In order to verify the proposed converter's performance, the relevant experiment is performed.