Abstract

Stability of the epitaxial graphene film on a SiC substrate was investigated. The graphene film was treated by a strong acid of piranha solution ( $\mathrm{H}_{2}\mathrm{O}_{2}+\mathrm{H}_{2}\text{SO}_{4}$ ), which have been conventionally used in the washing process of the silicon technology. Raman spectroscopy and Hall measurement showed almost the same characteristics before and after piranha treatment. These stable characteristics indicate that the epitaxial graphene film on a SiC substrate can apply the silicon device fabrication processes.

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