Abstract
This article reviews the development and breakthrough of SiGe technologies. SiGe HBTs with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and monolithic integrated millimeter-wave circuits based on these HBTs have been developed by several groups. As this paper shows in the overview, the combination of active devices with passive planar structures, including antenna elements, allows single-chip realizations of complete millimeter-wave front-ends.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
