Abstract
Diffused diodes, fabricated from plastically deformed germanium, were examined for high-speed switching response. The degradation of minority carrier lifetime caused by dislocations generated during plastic deformation greatly reduced the minority carrier storage effect and permitted fabrication of diodes with turnoff times of the order of 10−9 sec.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
