Abstract
A discussion of various techniques usable in obtaining high-speed digital circuit operation is presented. To gain these advanced digital speeds, tunnel diodes have been incorporated into transistor circuitry. The fast rate of change of voltage and the bistable capabilities of the tunnel diode are the characteristics which provide for higher speeds. Development has been mainly applied to the application of the GaAs tunnel diode in circuitry because of the higher output voltage available. Some of the ultimate speeds attainable in circuits providing impedance transformation and amplification will be discussed, followed by circuit applications in more detail.
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