High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure

Abstract

A high-speed silicon-on-insulator (SOI) 1/8 frequency divider with body-fixed structure was demonstrated using field-shield (FS) isolation. The maximum operation frequency is 2.1 GHz at 3.3 V. The SOI divider operates about 1.6 times faster than a bulk divider with the same dimensions. The normalized power consumption of the SOI divider at the maximum operating frequency is about 60% of that of the bulk divider. I d-V d transistor characteristics were improved, eliminating the kink in the saturation region, and the linearity of inverter characteristics was also improved with the body-fixed structure. The body contact collects excess carriers in the channel region, thereby preventing the parasitic bipolar action. From these results, it is suggested that devices using a field-shield body-fixed SOI structure have the potential for use in GHz-level systems containing analog circuits, and they are expected to be applied to portable communication systems and portable computers used in the multimedia era.