Abstract
With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6 dB modulation depth at 10 Gbit/s from a 3.5 m long device.
Highlights
Silicon photonics has been a highly active area of research in recent years
With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability
In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction
Summary
Silicon photonics has been a highly active area of research in recent years The result of this is the rapid development of the photonic building block components which facilitate a range of applications. One such component which has seen significant development is the high speed silicon based optical modulator, so much so that silicon based devices in certain application areas are appearing on the market [1]. One challenge in the fabrication of carrier depletion silicon based optical modulators is the precise alignment of the pn junction within waveguide. In this paper we introduce a new design of carrier depletion based silicon optical modulator for which a self aligned process can be used to form the pn junction. Experimental results obtained from an initial fabrication batch have demonstrated data transmission at 10Gbit/s with 6dB of modulation depth from a 3.5mm phase shifter
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