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Abstract
SiGe heterobipolar transistors are near the point of commercial availability. They will be inserted in mobile phones in the 0.9 to 2.4 GHz range and in wireless local area networks using the 2.4 to 5.8 GHz band. The advantage of SiGe HBTs is not only their excellent high frequency and noise performance with a maximum frequency of oscillation up to 120 GHz and 0.9 dB noise figure at 10 GHz, but the compatibility of SiGe to standard silicon technology. Fabrication processes and results of a research-like SiGe HBT and a possible production type HBT version are described. In addition, some circuit demonstrators for SiGe ICs will be presented.
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