High-speed response of InAlAs/InGaAs M-S-M photodetectors at 1.3- and 1.5- mu m wavelengths: experiment and theory

Abstract

Summary form only given. The authors report the DC and pulse response, at 1.3- and 1.5- mu m wavelengths, of OMCVD-grown In/sub 0.53/Ga/sub 0.47/As/InP metal-semiconductor-metal (M-S-M) photodetectors which use a thin layer of lattice-matched In/sub 0.52/Al/sub 0.48/As for barrier enhancement. They also report the results of a computational study of the temporal response of the generic InGaAs M-S-M detector at these wavelengths, indicating how the device dimensions influence the bandwidth. Pulse responses of 55 ps FWHM (full width at half maximum) at 1.53 mu m and 48 ps at 1.31 mu m were obtained with gain switched diode laser pulses, indicating intrinsic bandwidths of approximately 8 and approximately 11 GHz, respectively, with a limiting system response width of approximately 40 ps. The authors present the results of 2D calculations of the transit time limited impulse response of the detector for 1.3- and 1.4- mu m incident radiation. >