Abstract
Abstract Microwave pulse bursts were obtained through optical domain intensity modulated microwave carriers, sliced by cascaded modulator technique, followed by non-linear semiconductor optical amplifier (SOA) pre-chirp. After 3 to 18 km of buried fiber propagation and photo detection, the microwave signals presented increased extinction ratio, up to 36 GHz, with pulse modulation windows from 166 to 1000 picoseconds, achieving rise times near to 10 ps.
Highlights
The light amplification using semiconductors diodes was proposed by Basov et al [1], using the electromagnetic energy generated by the recombination of electrical carriers in a p-n junction
The light carrier was provided by a continuous wave (CW) 1550 nm external cavity laser (ECL), 100 kHz linewidth, followed by an optical polarization controller (OPC)
The semiconductor optical amplifier (SOA) was followed by an optical isolator (OI), an OPC, and a cascaded second modulator (MZM2), zero chirp, with 3 dB bandwidth equal to 40 GHz
Summary
The light amplification using semiconductors diodes was proposed by Basov et al [1], using the electromagnetic energy generated by the recombination of electrical carriers in a p-n junction. Semiconductor Optical Amplifiers (SOAs) were achieved with multiple quantum-well (MQW) active regions and one-pass traveling wave SOAs were obtained using anti-reflections facets with small mirror reflectivity around 10-4 [3], [4]. Theoretical analysis of MQW-SOAs have been performed including gain compression in polarization insensitive devices [5], including injected current dynamics effects [6], [7]. When very short pulses are amplified, non-linear SOA effects of self-phase modulation (SPM) cause pulse spectral broadening and distortion [8]-[10]. SPM introduces a pulse chirp (time-dependent instantaneous optical carrier frequency deviation) related to the SOA carrier lifetime, SOA saturation and gain [11]-[14]. The SOA chirping has been recently analyzed [15]
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