Abstract
The properties of high pulling rate (20–27 mm/h) LEC GaAs single crystals under a magnetic field are investigated by using the infrared absorption coefficient, α, at a wavelength of 1.0 μm, the microscopic resistivity and the Hall measurement technique. The distributions of α and the microscopic resistivity in these crystals are not as homogenous as those of the conventional 9 mm/h pulling rate crystal with or without magnetic field. After whole ingot annealing at 950°C, however, high speed pulling crystals are drastically changed to very homogeneous in the distributions of α and the resistivity. This is attributed to the increase and the homogeneous distribution of the native deep donor in the crystals.
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