Abstract
Free-standing nonpolar GaN substrates provide an excellent platform for the fabrication of high-speed blue and green light-emitting diodes (LEDs), which are attractive for visible-light communication, plastic optical fiber communication, and short-range under water optical communication. Nonpolar LEDs on free-standing GaN exhibit a large electron-hole wave function overlap, low extended defect density, and favorable thermal properties. Here, we demonstrate high-speed nonpolar InGaN/GaN LEDs with a peak emission wavelength between 455 and 465 nm on free-standing nonpolar GaN substrates. A large frequency modulation bandwidth of 524 MHz is demonstrated at a current density of 10 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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