Abstract
High-speed photodetectors operating at mid-wave infrared are crucial for free-space optical communication and frequency comb spectroscopy. In this letter, we report a high-speed mid-wave infrared uni-traveling carrier photodiode based on InAs/InAsSb type-II superlattice at room temperature for the first time. The device exhibits a cut-off wavelength of around 5.5 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> at room temperature. The responsivity of the device is about 0.6 A/W (at 4.5 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>) under −1 V at room temperature. The frequency response of the device is characterized by an optical parametric amplification system generating mid-infrared femtosecond pulses. A device with a 20 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> diameter has a 3-dB bandwidth of 12.8 GHz at −4 V. These promising results suggest that the device could be potential candidates to be employed in the emerging high-speed MWIR applications.
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