Abstract
A p-n diode having a channel structure (static shielding diode, SSD) is proposed to increase the reverse blocking voltage of a low-loss high-speed p-n diode. It is shown by numerical analysis and experiment that a low-loss, high-speed SSD with high blocking capability can be realized by surrounding the p-layer and a portion of the n-layer with a highly doped p+-layer. In this method, the blocking voltage can be increased by a factor of 2 to 3.5 without sacrificing the low forward voltage drop and fast reverse recovery. The SSD with a 0.81-V forward voltage drop at 80 A/cm2, a 180-V blocking voltage at 150°C, and a 87-ns reverse recovery time can be fabricated.
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