Abstract
We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch. The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain V(pi) L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation.
Highlights
Recent interest in silicon optical interconnects is driven by the need for high capacity data communication at a relatively low cost
We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch
The hybrid silicon evanescent modulators and switches can be used as interconnects and further integrated with other optical devices to achieve a transparent optical communication system
Summary
Recent interest in silicon optical interconnects is driven by the need for high capacity data communication at a relatively low cost. To this end, research on interconnect technology using modulators and switches is being actively pursued. Another new approach is to use carrier depletion inside offset multiple quantum wells (MQW) in a hybrid silicon evanescent MZM. This MZM have less wavelength sensitivity and larger optical bandwidth compared to an EAM. Switch arrays are important for interchip and intrachip communication networks, and these elements together with lasers [6], amplifiers, and photodetectors [7], can be integrated as transmitters or receivers for future optical networks
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