Abstract
An electroabsorption (EA) modulator is monolithically integrated with a semiconductor optical amplifier (SOA) using a very simple identical epitaxial layer (IEL) scheme. By adopting dry-etched high-mesa structure and thick SiO/sub 2/ beneath the bonding pad, the modulator capacitance is estimated to be less than 0.13 pF, and a 3-dBe bandwidth over 40 GHz has been demonstrated for the IEL-based integrated EA modulator. The SOA section helps reduce the coupling loss of the device, and the fiber-to-fiber loss is reduced from 18 to 3 dB at an injection current of 70 mA into the SOA section.
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