Abstract
CsSrI3:3%Eu (Φ10×55mm), CsSrI3:5%Eu (Φ10×50mm) and CsSrI3:7%Eu (Φ10×45mm) single crystals have been successfully grown by the edge-defined film-fed growth method for the first time, with the growth rate reaching 10-20mm/h. We designed a crystal growth device that achieved the first growth of this binary scintillation crystal by the EFG method. The raw material purification, temperature gradient of experimental device and growth rate, which are the effect factors of crystal quality, were systematically investigated. Moreover, the effect of Eu2+ concentration on optical properties were studied. The Eu2+ 5d-4f emission band was observed at 450-455nm, and the PL decay time was determined as 1.32µs for CsSrI3:3%Eu, 1.35µs for CsSrI3:5%Eu and 0.73µs for CsSrI3:7%Eu.
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