Abstract
In this paper, AlN synthesis is achieved by High Temperature CVD which consists of a graphite susceptor heated by induction in a home-built vertical cold-wall reactor working at low pressure. The reactants used are ammonia NH3 and aluminium chlorides AlClx species formed in situ via Cl2 reaction with high purity Al wire. AlN films were deposited on a 55 mm diameter graphite susceptor between 1200{degree sign}C and 1600{degree sign}C. The influence of deposition temperature on growth rate, surface morphology, grain size and crystalline state is presented. Growth rates of up to 230 µm.h-1 were reached. AlN layers were characterized by SEM, X-ray Diffraction, Raman spectroscopy and Optical Profilometry.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
