Abstract
In this paper, AlN synthesis is achieved by High Temperature CVD which consists of a graphite susceptor heated by induction in a home-built vertical cold-wall reactor working at low pressure. The reactants used are ammonia NH3 and aluminium chlorides AlClx species formed in situ via Cl2 reaction with high purity Al wire. AlN films were deposited on a 55 mm diameter graphite susceptor between 1200{degree sign}C and 1600{degree sign}C. The influence of deposition temperature on growth rate, surface morphology, grain size and crystalline state is presented. Growth rates of up to 230 µm.h-1 were reached. AlN layers were characterized by SEM, X-ray Diffraction, Raman spectroscopy and Optical Profilometry.
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