Abstract
ABSTRACTWe present a high speed, high responsivity, tensile strained Ge p-i-n photodetector selectively grown on Si platform that covers the whole C band and a large part of the L band for high capacity optical communications. The device shows a 3dB bandwidth of 2.5GHz and its responsivities at 1310nm and 1550nm are comparable to commercial InGaAs photodetectors currently used in telecommunications. The device has promising applications in Si microphotonics such as the fiber-to-the-home technology.
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