Abstract
A novel heterojunction phototransistor (HPT) structure is proposed using two base regions such that the emitter-base depletion region is located in the wide-gap material. Very small area HPTs have been fabricated on semi-insulating substrates. Maximum current gain is β = 300. The response time, with rise time as short as 250 ps and FWHM = 320 ps, has been obtained using a picosecond pulse dye laser.
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