Abstract
GaAs 2.0-8.0-GHz and 6.0-10.5-GHz dynamic frequency dividers have been developed. These dynamic dividers have a double-loop structure using a differential amplifier for high-speed and stable operation despite supply-voltage fluctuations. This structure operates from a single voltage supply. An advanced WSi self-aligned gate process technology (0.1- mu m long gate) was used to improve the high-frequency characteristics of the FET.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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