Abstract
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.
Highlights
The exponential growth of data traffic, driven by the 5G wireless communication [1] sets a continuous increase of demand for a technology matching the requirements in terms of bandwidth and power consumption
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s
For the double layer geometry (DLG) EAM fabrication we used high quality single crystal graphene grown by chemical vapor deposition (CVD) on copper (Cu) foils by deterministic seeded growth [22], transferred on the Si waveguides by a semi-dry transfer technique demonstrated previously [22,26]
Summary
The exponential growth of data traffic, driven by the 5G wireless communication [1] sets a continuous increase of demand for a technology matching the requirements in terms of bandwidth and power consumption. In the datacom and telecom roadmaps, the continuous bandwidth increase requires a pathway of insertion losses, power consumption and cost reduction to enable generation systems [3]. Within this scenario, in which conventional technologies may reach performance saturation, emerging materials with high electro-optical performance must be investigated. In this work we show for the first time a broadband high-speed graphene-based EAM with a 120μm long double layer geometry (DLG) and integrated on straight Si passive waveguide with 29 GHz electro-optical bandwidth, working up to 50 Gb/s non-return-to-zero (NRZ) modulation format. We rely on wafer scale seeded array fabrication method [22] and CMOS compatible processes to demonstrate how graphene technology can meet the highest performances required by the market
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