Abstract
We demonstrated high-speed imaging of photoluminescence (PL) and electroluminescence (EL) for not only band-to-band but also multiple deep-level emissions in a multicrystalline Si solar cell. We used a cooled InGaAs camera with a photosensitive range of 900 - 1700 nm equipped with band-pass filters for the selective detection of various deep-level emissions. The exposure time for imaging was only 1 - 10 seconds. Comparisons of the present PL images with the microscopic PL mappings confirmed for us that essentially the same luminescence patterns were obtained.
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