Abstract
The speed of conversion of infrared (IR) images by a planar semiconductor gas discharge system into the visible range has been investigated. Argon or nitrogen are used in the discharge gap having an electrode distance of 100 μm. Using pulse radiation from an IR laser to excite the system, we have shown that the characteristic response time of the device with the cryogenic discharge in the gap can lie in the submicrosecond range. This characteristic of the system can be applied for a fast IR imaging at a rate higher than 106 frame/s.
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