Abstract

A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35 dB and the insertion loss of 0.7 dB is obtained, the switching speed is less than 1 ps, and the whole device length can be shortened to 616 μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.

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