Abstract
The high-frequency response of a GaAs-AlGaAs edge-illuminated photodiode monolithically integrated with a single-quantum-well laser and resistor network has been measured and simulated. The measured response of the monitor diode to a step impulse applied to the laser exhibits a nonoptically induced precursor pulse. Simulations show this interference arises primarily from mutual inductive coupling between on-chip wiring and wirebond connections. If the coupling is eliminated, simulations show that the risetime of the laser-detector combinations is around 575 ps. Although these coupling effects are not intrinsic problems, the work demonstrates the importance of including packaging parasitics and on-chip wiring interactions in OEIC (optoelectronic integrated circuit) data link design. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
