Abstract
In order to improve the phase transition properties of CGe2Sb2Te5 (CGST) phase-change materials, we proposed and demonstrated a carbon-doped Sb-rich Ge0.6Sb3Te phase-change material [C0.05(Ge0.6Sb3Te)0.95, named Sb-rich GSTC]. The phase transition of Sb-rich GSTC can be triggered by a 10 ns electric pulse with a large resistance ratio, which is much better than that of CGST. Meanwhile, the Sb-rich GSTC film maintains good thermal stability with a crystallization temperature and data retention of 203.1 °C and 114.8 °C@10-year, respectively. The above results imply carbon-doped Sb-rich GeSbTe alloy is a promising material for phase-change memory applications with high operation speed, a large memory window, and good stability and process compatibility.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
