High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module

Abstract

In this study, the simultaneous realization of high-speed and high-temperature switching operations is demonstrated using a custom-made high-speed and high-temperature power module installed with a silicon carbide (SiC) CMOS gate driver, which can reduce gate loop inductance and operate at high temperatures. Approximate switching speeds of 70 and 60 V/ns are achieved during the turn-on and turn-off operations, respectively, at 300°C, 600 V DC bus voltage, and 20 A load current using the developed module. The switching speed remained above 50 V/ns in the temperature range from room temperature to 300°C. Numerical calculations based on the static properties of the SiC power MOSFET and CMOS gate driver can predict the actual switching properties over a wide temperature range when the developed module incorporating the fabricated SiC CMOS gate driver is used.