Abstract
A high speed electroabsorption modulator (EAM) with high saturation optical power is desirable for analog fiber link applications, as the link gain increases quadratically with the optical power. EAMs with multiple-quantum-well (MQW) active layers are popular photonic applications. In this paper we also discuss the design and fabrication of the traveling wave (TW) electrode for the InGaAs QW EAM for high speed (>40 GHz) operation.
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