High speed and high power performances of LTG-GaAs based TWPDs in telecommunication wavelength (∼1.3 μm)

Jin-Wei Shi Jin-Wei Shi,J.E Bowers,Yen-Hung Chen Yen-Hung Chen,Yi-Jen Chiu Yi-Jen Chiu,Chi-Kuang Sun Chi-Kuang Sun,Kian-Giap Gan Kian-Giap Gan

doi:10.1109/cleo.2002.1033367

High speed and high power performances of LTG-GaAs based TWPDs in telecommunication wavelength (∼1.3 μm)

Jin-Wei Shi Jin-Wei Shi, J.E Bowers + Show 4 more

Open Access

https://doi.org/10.1109/cleo.2002.1033367

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Publication Date: May 24, 2002

Affiliation: University of California, Irvine, Tsinghua University

#Traveling-wave Photodetectors #High Power + Show 8 more

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Abstract

Summary form only given. We demonstrate ultra-high speed and high saturation power performance of LTG-GaAs based MSM traveling-wave photodetectors (TWPDs) in the telecommunication wavelength regime (/spl sim/1300 nm). Due to the short carrier trapping time of the LTG-GaAs layer and the superior microwave guiding structure in MSM TWPDs, record ultra-high peak power bandwidth product performance has been obtained in long absorption length devices. These results suggest applications in low-cost GaAs based photo-receiver circuits without electrical pre-amplifiers and high power photomixer devices which are compatible with fiber optical communication components.

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