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Abstract
The fabrication and performance of high-speed and high-power 1.3-μm InGaAsP buried crescent lasers with semi-insulating current blocking layers are reported. A modulation bandwidth of 11 GHz and acw output power of 42 mW/facet have been achieved. An approximate circuit model of the semi-insulating buried crescent laser, which describes the effect of dc bias on parasitic capacitance at high-speed operation, is also presented.
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