Abstract

Using intense femtosecond laser (150 fs, 790 nm, 1 kpps), precise and high-speed laser ablation etching of hexagonal GaN is demonstrated. Etch rate above the ablation threshold is measured to be <5 nm/pulse. An etch rate per second of 25 μm/s is realized at a fluence of 2.2 J/cm 2. Although conventional long pulsed, tens of ns, KrF laser ablation of the GaN resulted in the formation of a Ga layer on the ablated surface due to laser-induced thermal decomposition process, the femtosecond laser etching is found to keep the ablated surface unchanged due to non-thermal ablation. Based on the XPS spectra observation the femtosecond laser ablated GaN surface is found to remain unchanged.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.