Abstract
III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power. Owing to the fast recombination (τe<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10-3 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.
Highlights
InGaN-based violet-blue light-emitting diodes (LEDs) has been widely used as the fundamental component for solid-state lighting (SSL) due to its advantages such as high efficiency, long lifetime, reduced heat generation, and fast turn-on [1,2,3,4]
We present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power
Funding King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01)
Summary
InGaN-based violet-blue light-emitting diodes (LEDs) has been widely used as the fundamental component for solid-state lighting (SSL) due to its advantages such as high efficiency, long lifetime, reduced heat generation, and fast turn-on [1,2,3,4]. GaN-based laser diode (LD) has shown a modulation bandwidth of ~2.6 GHz [10] and a data rate of ~2 Gbps for white light communication [11], further development is required to address the limited etendue, speckle noise, and eye-safety related concerns [12, 13]. We demonstrated a high-speed, absorber-free InGaN-based SLD on semipolar (20 2 1 ) GaN substrate, emitting at. The SLD exhibits > 800 MHz modulation bandwidth with an optical power of > 20 mW, benefiting from the small RC delay, the short lifetime associated with the amplified spontaneous emission (ASE) process, and the reduced polarization field in semipolar quantum-wells (QWs) [18]. Our work suggests that SLD is promising for SSL-VLC dual-functionalities light source
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