Abstract
Ultraviolet illumination of hydrogenated amorphous silicon-carbon alloys, a-Si:C:H, produces oxide patterns with a resolution better than 5 mu m. Notably, the photoinduced oxidation occurs at temperatures less than 50 degrees C for a-Si:C:H films with a carbon content>30 atomic %. Possible applications include photolithography, apertured membranes, archival optical storage and gate insulators for thin-film transistors. >
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