Abstract
AbstractThe cover picture of the present issue of physica status solidi (a) is a temperature map of a AlGaN/GaN heterostructure field effect transistor (HFET) obtained using micro‐Raman spectroscopy. The inset shows a photograph of the device with source (S), gate (G) and drain (D) positions marked. The paper by M. Kuball et al. [1] is an invited presentation from the International Workshop on Nitride Semiconductors (IWN 2004).In the Rapid Research Letter by B. Lamprecht et al. [2] the authors report on the successful fabrication and characterization of working organic photodiodes deposited on ordinary newspaper sheets as an example for a flexible and very rough substrate with unfortunate mechanical properties.
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