Abstract
Flexible polyethylene naphthalate photodetector substrates with CdSe/ZnS core–shell quantum dots (QDs) coated on ZnO nanorod arrays were fabricated and characterized. It was demonstrated that the photoresponsivity of such a photodetector was enhanced as the CdSe/ZnS QD content was increased. Using a 350-nm wavelength of incident light and 5 V of applied bias, the responsivities of the ZnO nanorod-based photodetectors with 0%, 0.25%, 0.50%, and 1% of CdSe/ZnS QD cover were measured at 3.2, 34.2, 53.5, and 73.2 A/W, respectively. As a result, the investigation of the fabrication and characterization of flexible ZnO/QDs photodetector devices revealed that devices with high sensitivity can be employed in the field of low-light imaging sensor applications.
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