High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode

Abstract

This work reports on the fabrication of an improved sensitivity metal–insulator–metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V–V2O5–Al) thin film layers. The MIM diode is fabricated using electron-beam lithography, sputter deposition and metal liftoff techniques. X-ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V2O5 insulating thin film. Electrical characterisation of the fabricated V–V2O5–Al shows a clear high sensitivity at −316 mV that reaches −8.52 V−1 with a dynamic resistance of 5.024 kΩ.