High sensitivity Photoconductive for ZnO:MgO Nanoparticles

Abstract

ZnO:MgO thin films were deposited on glass and Si substrates by thermal pyrolysis deposition. Polycrystalline nature of the Wurtzite (hexagonal) structure with the preferred orientation of (101) and the Crystallite size for it located within nanoscale range are proved by X-ray diffraction measurement. The results showed that the prepared membranes were thick (92) nm. The root mean square (RMS), surface roughness exponentially increases with the dopant concentration of the prepared films are revealed by AFM measurement. Undoped Zinc oxide and doped with different concentration of MgO films have direct allowed transition band gap with (2.3±0.3) eV which is confirmed by UV-Visible measurements.ZnO:MgO thin films have been used in photoconductive applications, many wavelengths have been used; (277, 457, 522, 592, 632, 835) nm. Sensitivity, rise and fall times have been calculated for these wavelengths. In general the results revealed fast rise and fall times which is~ ms with more than 1300% sensitivity for 457 nm.