Abstract
In this paper, we designed a group of horizontal Hall sensors in 0.35 µm BCD (bipolar/CMOS/DMOS) technology. Compared with the existing Hall devices, the design has improvement in parts such as Hall cell parameter set and layout design under BCD technology. And then the Hall chip is taped out. The results from the precise experiment of the Hall cell verify the optimization method which can be used to realize Hall sensitivity of 964 V/ (AT).
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