Abstract
Ultraviolet (UV) photodetectors (PDs) based on ZnO micro/nanowire (MNW) networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity (5×103) for 365nm UV light with a fast recovery time (0.2s) at a reverse bias voltage of 2V. The light induced modulation of Schottky barrier and MNW–MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on–off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon.
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