Abstract
ABSTRACT Electrochemical etching (ECE) served to fabricate porous silicon (PS), and the impact of different volume ratios of HF:ethanol on the morphological properties of PS has been examined. ZnS/PS composites were obtained by depositing ZnS film on PS substrate with the adoption of the spray method at a substrate temperature of 300°C and a spray rate of 3 ml/min. The thin film was characterized systematically by using several characterization techniques such as field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and UV–Vis–NIR spectrometry. The deposited film highlights a cubic structure with energy band gap of 3.66 eV. UV photodetectors (PDs) based on ZnS have been fabricated on PS substrates, and the PDs had shown a high photosensitivity (14 × 103) for 400 nm UV light with the current decay and rise times of 0.6 and 0.9 s, respectively, and bias voltage of 2 V.
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